Direct measurement of Cbe and Cbc versus voltage for small HBT's with microwave s-parameters for scaled gummel-poon BJT models

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 1, 1999, Pages 108-110

  Chang, Charles ^a   Asbeck, Peter ^a   Zampardi, Peter ^a   Wang, K C ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; MICROWAVES; SCATTERING PARAMETERS;

SCALED HBT MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032761246     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.740092     Document Type: Article

References (6)

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3. D. Costa, W. Liu, and J. Harris, "A new direct method for determining the heterojunction bipolar transistor equivalent circuit model," in IEEE Bipolar Circuits Technol. Meeting, 1990, pp. 118-121.
4. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
5. G. Hanington, C. Chang, P. Zampardi, and P. Asbeck, "Thermal effects in HBT emitter resistance extraction," Electron. Lett., vol. 32, no. 16, pp. 1515-1516, 1996.
6. I. Getreu, Modeling the Bipolar Transistor in Computer-Aided Design of Electronic Circuits, Vol I. New York: Elsevier, 1976.