RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 37-39

  Schmitz, J ^a   Cubaynes, F N ^a   Havens, R J ^a   De Kort, R ^a   Scholten, A J ^a   Tiemeijer, L F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Capacitance; Capacitance measurement; Leakage current; MOS capacitor; MOSFET; RF; Tunneling

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOS CAPACITORS; VOLTAGE MEASUREMENT;

HIGH LEAKAGE DIELECTRICS; MOS CAPACITANCE-VOLTAGE MEASUREMENT METHODOLOGY;

MOSFET DEVICES;

EID: 0037251192     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807016     Document Type: Letter

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