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Volumn 2005, Issue , 2005, Pages 7-12

TCAD challenges in the nanotechnology era

Author keywords

[No Author keywords available]

Indexed keywords

HIERARCHICAL SYSTEMS; MATHEMATICAL MODELS; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33845912676     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201460     Document Type: Conference Paper
Times cited : (1)

References (31)
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    • FinFET design considerations based on 3D simulation and analytical modeling
    • G. Pei, J. Kedzierski, P. Oldiges, M. Ieong, E. Kan, "FinFET design considerations based on 3D simulation and analytical modeling," IEEE Trans. Elec. Dev., 49 (8), p.1411 (2002).
    • (2002) IEEE Trans. Elec. Dev. , vol.49 , Issue.8 , pp. 1411
    • Pei, G.1    Kedzierski, J.2    Oldiges, P.3    Ieong, M.4    Kan, E.5
  • 24
    • 0043269756 scopus 로고    scopus 로고
    • Six-band k.p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
    • M. Fischetti, Z. Ren, P. Solomon, M. Yang, K. Rim, "Six-band k.p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness," J. Appl. Phys. 94 (2), 1079 (2003).
    • (2003) J. Appl. Phys. , vol.94 , Issue.2 , pp. 1079
    • Fischetti, M.1    Ren, Z.2    Solomon, P.3    Yang, M.4    Rim, K.5
  • 27
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    • Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering
    • M.V. Fischetti, D.A. Neumayer, E.A. Cartier, "Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering," J. Appl. Phys., 90 (9) p.4587 (2001).
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    • Fischetti, M.V.1    Neumayer, D.A.2    Cartier, E.A.3
  • 28
    • 3142715886 scopus 로고    scopus 로고
    • An assessment of room temperature phonon limited mobility in gated silicon nanowires
    • R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, M. D. Giles, "An assessment of room temperature phonon limited mobility in gated silicon nanowires," Appl. Phys. Lett. 84 (25), 5270 (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.25 , pp. 5270
    • Kotlyar, R.1    Obradovic, B.2    Matagne, P.3    Stettler, M.4    Giles, M.D.5
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    • The non-equilibrium Green's function (NEGF) formalism: An elementary introduction
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    • Datta, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.