Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 143-146

  Liang, Tao ^a   Windl, W ^a   Lopatin, S ^b   Duscher, G ^b,c  

^a The Ohio State University   (United States)

^b North Carolina State University   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Atomic measurements; Educational institutions; Electrons; Image resolution; Impurities; Materials science and technology; Oxidation; Power engineering and energy; Semiconductor process modeling; Substrates

Indexed keywords

ATOMS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; GERMANIUM; IMAGE RESOLUTION; IMPURITIES; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; OXIDATION; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SUBSTRATES;

ATOMIC MEASUREMENTS; EDUCATIONAL INSTITUTIONS; MATERIALS SCIENCE AND TECHNOLOGY; POWER ENGINEERING AND ENERGIES; SEMICONDUCTOR PROCESS MODELING;

CRYSTAL ATOMIC STRUCTURE;

EID: 84943239122     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233657     Document Type: Conference Paper

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