Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 875-878

  Kennel, H W ^a   Cea, S M ^a   Lilak, A D ^a   Keys, P H ^a   Giles, M D ^a   Hwang, J ^b   Sandford, J S ^b   Corcoran, S ^b  

^a INTEL CORPORATION   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; IMPURITIES; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

TRANSIENT ENHANCED DIFFUSION (TED);

CMOS INTEGRATED CIRCUITS;

EID: 0036923798     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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