Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7357-7360

  Jain, S H ^a   Griffin, P B ^a   Plummer, J D ^a   Mccoy, S ^b   Gelpey, J ^b   Selinger, T ^b   Downey, D F ^c  

^a Stanford University   (United States)

^b Vortek Industries Ltd   (Canada)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ACTIVATION; DOPANTS; SHALLOW JUNCTIONS; SOLID PHASE EPITAXY (SPE);

BORON; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTING SILICON;

EID: 11044229556     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814792     Document Type: Article

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