Understanding stress enhanced performance in intel 90nm CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 118-119

  Giles, M D ^a   Armstrong, M ^a   Auth, C ^a   Cea, S M ^a   Ghani, T ^a   Hoffmann, T ^a   Kotlyar, R ^a   Matagne, P ^a   Mistry, K ^a   Nagisetty, R ^a   Obradovic, B ^a   Shaheed, R ^a   Shifren, L ^a   Stettler, M ^a   Tyagi, S ^a   Wang, X ^a   Weber, C ^a   Zawadzki, K ^a  

^a INTEL CORPORATION   (United States)

Author keywords

CMOS; SiGe and mobility; Strain; Stress; Uniaxial

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; SILICON NITRIDE; STRESS ANALYSIS; TENSORS; THICKNESS CONTROL; TRANSISTORS;

CAPPING; CURRENT FLOW; SCALING; UNIAXIAL;

CMOS INTEGRATED CIRCUITS;

EID: 4544320963     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345427     Document Type: Conference Paper

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