Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 199-204

  Kasai, Seiya ^a   Yumoto, Miki ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHES; ELECTRON TRANSPORT PROPERTIES; ETCHING; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM CIRCUITS;

ADDERS;

EID: 0037290299     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00195-8     Document Type: Conference Paper

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