Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2375-2381

  Hasegawa, Hideki ^a   Muranaka, Tsutomu ^a   Kasai, Seiya ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Aluminum gallium nitride (AlGaN); Gallium nitride (GaN); Magnetotransport; Photoluminescence (PL); Quantum wire (QWR); Reactive ion beam etching (RIBE); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; ETCHING; GALLIUM NITRIDE; ION BEAMS; METHANE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM GALLIUM NITRIDE; ION BEAM ETCHING; LANDAU PLOT; SHUBNIKOV-DE HAAS OSCILLATIONS; SUBBAND ENERGY SPACING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0038009573     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2375     Document Type: Article

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