Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 11-15

  Sato, Taketomo ^a   Tamai, Isao ^a   Yoshida, Souichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaAs; Growth mechanism; Molecular beam epitaxy (MBE); Patterned substrate; Selective growth

Indexed keywords

CONTROLLABILITY; ETCHING; GROWTH (MATERIALS); INSULATION; LITHOGRAPHY; METAL INSULATOR BOUNDARIES; MOLECULAR BEAM EPITAXY; PLANERS; REACTION KINETICS; REFLECTION; SUBSTRATES;

BOUNDARY PLANES; GROWTH MECHANISM; PATTERNED SUBSTRATES; SELECTIVE GROWTH;

SEMICONDUCTOR QUANTUM WIRES;

EID: 3342899305     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.018     Document Type: Conference Paper

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