A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 215-218

  Lee, Sun Ghil ^a   Kim, Young Pil ^a   Lee, Hye Lan ^a   Jin, Beom Jun ^a   Lee, Jong Wook ^a   Shin, Yu Gyun ^a   Choi, Siyoung ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Gate oxide; Mobility; MOSFET; Reliability; SiGe; Strained Si

Indexed keywords

DEGRADATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; RELAXATION PROCESSES; RELIABILITY; SEMICONDUCTING GERMANIUM; STRAIN;

GATE OXIDES; MOBILITY; SIGE; STRAINED SI;

SEMICONDUCTING SILICON;

EID: 13244276342     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.070     Document Type: Conference Paper

References (7)

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