Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP

IEEE Photonics Technology Letters

Volumn 18, Issue 12, 2006, Pages 1377-1379

  Mi, Z ^a   Yang, J ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Characteristics temperature; p doping; Quantum dash lasers; Threshold current; Tunnel injection

Indexed keywords

EPITAXIAL GROWTH; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

PHOTOLUMINESCENCE INTENSITY; QUANTUM-DASH LASERS; THRESHOLD CURRENT; TUNNEL INJECTION;

SEMICONDUCTOR LASERS;

EID: 33745161012     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877341     Document Type: Article

References (16)

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