Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 40, Issue 2, 2004, Pages 105-112

  Dikshit, A A ^a   Pikal, J M ^a  

^a UNIVERSITY OF WYOMING   (United States)

Author keywords

Gain; Long wavelength lasers; Quantum dot lasers; Semiconductor lasers; Temperature performance

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; GAIN MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT;

CARRIER DISTRIBUTION; CHARACTERISTIC TEMPERATURE; INDIUM ARSENIDE QUANTUM DOT LASERS; INDIUM GALLIUM ARSENIDE QUANTUM DOT LASERS; LONG WAVELENGTH LASERS; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 1242331348     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.821532     Document Type: Article

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