InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: In situ stress measurements

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 975-979

  Garcia J M ^a   Gonzalez L ^a   Gonzalez M U ^a   Silveira, J P ^a   Gonzalez Y ^a   Briones, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

A1. Nanostructures; A1. Stresses; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPY; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; STRESS RELAXATION;

DIMERIZATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0035398069     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00962-9     Document Type: Conference Paper

References (11)