Deactivation of solid phase epitaxy-activated boron ultrashallow junctions

Journal of the Electrochemical Society

Volumn 152, Issue 10, 2005, Pages

  Lerch, W ^a,d   Paul, S ^a   Niess, J ^a,d   Cristiano, F ^b   Lamrani, Y ^b   Calvo, P ^b   Cherkashin, N ^b   Downey, D F ^c   Arevalo, E A ^c  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b LAAS CNRS   (France)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^d ELECTROCHEMICAL SOCIETY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

REGROWTH PROCESS; ROOM-TEMPERATURE IMPLANTS; SOLID PHASE EPITAXY-ACTIVATED BORON ULTRASHALLOW JUNCTIONS;

ACTIVATION ANALYSIS; AMORPHOUS SILICON; ANNEALING; BORON COMPOUNDS; ELECTRIC RESISTANCE; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

SEMICONDUCTOR JUNCTIONS;

EID: 27644479167     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2018176     Document Type: Article

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