High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1744-1747

  Zhou, Yi ^a   Wang, Dake ^a   Ahyi, Claude ^a   Tin, Chin Che ^a   Williams, John ^a   Park, Minseo ^a   Mark Williams, N ^b   Hanser, Andrew ^b  

^a AUBURN UNIVERSITY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

Free standing substrate; GaN; Reverse breakdown voltage; Reverse recovery; Schottky rectifier

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; OHMIC CONTACTS; SUBSTRATES; ULTRAFAST PHENOMENA;

FREE-STANDING SUBSTRATE; GAN; REVERSE BREAKDOWN VOLTAGE; REVERSE RECOVERY; SCHOTTKY RECTIFIER;

ELECTRIC RECTIFIERS;

EID: 33751257520     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.09.009     Document Type: Article

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