Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1157-1161

  Zhang, A P ^a   Dang, G ^a   Ren, F ^a   Han, J ^b   Cho, H ^a   Pearton, S J ^a   Chyi, J I ^c   Nee, T E ^c   Lee, C M ^c   Chuo, C C ^c   Chu, S N G ^d  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE; REVERSE BLOCKING VOLTAGES; SCHOTTKY RECTIFIERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033741137     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00059-9     Document Type: Article

References (10)

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