NMOS drive current reduction caused by transistor layout and trench isolation induced stress

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 827-830

  Scott, Gregory ^a   Lutze, Jeffrey ^a   Rubin, Mark ^a   Nouri, Faran ^a   Manley, Martin ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; STRESSES;

DRIVE CURRENT; MOBILITY REDUCTION; NMOS TRANSISTORS; TRENCH ISOLATION INDUCED STRESS;

MOSFET DEVICES;

EID: 0033325124     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)