Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 217-220

  Komoda, T ^a   Oishi, A ^a   Sanuki, T ^a   Kasai, K ^a   Yoshimura, H ^a   Ohno, K ^a,b   Iwai, M ^a   Saito, M ^b   Matsuoka, F ^a   Nagashima, N ^b   Noguchi, T ^a  

^a TOSHIBA CORPORATION   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DEPOSITION; DIFFUSION; STRESS ANALYSIS; THIN FILMS; INTEGRATED CIRCUIT DESIGN; MOSFET DEVICES; TENSILE STRESS;

CHANNEL DOPINGS; MOBILITY ENHANCEMENT; TENSILE CAPPINGS; UNIAXIAL STRAIN;

MOSFET DEVICES; HOLE MOBILITY;

45NM NODE; CAPPING LAYER; CHANNEL DIRECTIONS; CHANNEL ORIENTATIONS; CMOSFETS; NMOSFETS; PERFORMANCE; PMOSFET; SHORT-CHANNEL EFFECT; STRESS CONTROL;

EID: 21644435201     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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5. K. Rim et. al., Symp. on VLSI tech.2002, p98.
6. K. Goto et. al., Symp. on VLSI tech. 2003, p49.