Hot carrier degradation in novel strained-Si nMOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 18-22

  Lu, M F ^a   Chiang, Sinclair ^a   Liu, Alex ^a   Huang Lu, S ^a   Yeh, M S ^a   Hwang, J R ^a   Tang, T H ^a   Shiau, W T ^a   Chen, M C ^b   Wang, Tahui ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hot carrier degradation; Short channel; Strained Si

Indexed keywords

ACTIVATION ENERGY; CORRELATION METHODS; DEGRADATION; DIFFUSION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON TUNNELING; HEAT RESISTANCE; HOT CARRIERS; IONIZATION; OPTIMIZATION; RELIABILITY; TENSILE STRESS; THERMAL EFFECTS;

GATE CURRENT; HOT CARRIER DEGRADATION; SHORT CHANNEL; STRAINED-SI;

MOSFET DEVICES;

EID: 3042518756     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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