On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 5, 2005, Pages 993-998

  Irisawa, Toshifumi ^a   Numata, Toshinori ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^b  

^a MIRAI ASET   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Germanium; Impact ionization; MOSFETs; Silicon; Strain

Indexed keywords

CHEMICAL MODIFICATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; IMPACT IONIZATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN; SUBSTRATES; THERMAL EFFECTS;

ENERGY DISTRIBUTION FUNCTIONS; IMPACT IONIZATION EFFICIENCY; STRAIN DEPENDENCE; STRAINED SILICON MOSFETS;

MOSFET DEVICES;

EID: 18844413574     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.846344     Document Type: Article

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