Comparing the kinetics of bias stress in organic field-effect transistors with different dielectric interfaces

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Ng, Tse Nga ^a   Marohn, John A ^a   Chabinyc, Michael L ^b  

^a Cornell University ^*  (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OCTADECYL-TRICHLOROSILANE (OTS); POLYFLUORENETHIOPHENE TRANSISTORS; SHIELDING CHARGES;

DIELECTRIC PROPERTIES; DISSOCIATION; ELECTRON TRAPS; SILANES; STRESS ANALYSIS; SURFACE TREATMENT;

FIELD EFFECT TRANSISTORS;

EID: 33750519317     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358410     Document Type: Article

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