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Volumn 124-125, Issue SUPPL., 2005, Pages 488-493
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Structural properties of Ge-implanted SiO2 layers and related MOS memory effects
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Author keywords
Germanium; Ion implantation; Memory; Nanocrystal; RBS; Retention; TEM
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Indexed keywords
ANNEALING;
CAPACITANCE;
ELECTRIC POTENTIAL;
ELECTRIC VARIABLES MEASUREMENT;
INTERFACES (MATERIALS);
ION IMPLANTATION;
METALLIC FILMS;
MOS DEVICES;
NANOSTRUCTURED MATERIALS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GERMANIUM;
TRANSMISSION ELECTRON MICROSCOPY;
CAPACITANCE-VOLTAGE MEASUREMENTS;
MEMORY;
RBS;
RETENTION;
SILICA;
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EID: 27844498228
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.089 Document Type: Conference Paper |
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Times cited : (7)
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References (14)
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