Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

Nanotechnology

Volumn 17, Issue 15, 2006, Pages 3724-3727

  Sutter, E ^a   Sutter, P ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; OXIDES; SILICA; STRESS ANALYSIS; ULTRATHIN FILMS; WETTING;

DEWETTING; ELECTRIC ISOLATION; SILICON ON INSULATOR; ULTRATHIN SI TEMPLATE LAYERS;

NANOSTRUCTURED MATERIALS;

EID: 33748903235     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/15/018     Document Type: Article

References (13)

1. Yano K, Ishii T, Hashimoto T, Kobayashi T, Murai F and Seki K 1994 IEEE Trans. Electron Devices 41 1628
2. Zhuang L, Guo L and Chou S Y 1998 Appl. Phys. Lett. 72 1205
3. Campera A and Iannaccone G 2005 Solid State Electron. 49 1745
4. Park C J, Cho K H, Yang W-C, Cho H Y, Choi S-H, Elliman R G, Han J H and Kim Ch 2006 Appl. Phys. Lett. 88 0171916
5. Riabinina D, Durand C, Chaker M and Rosei F 2006 Appl. Phys. Lett. 88 073105
6. Stoica T, Vescan L and Sutter E 2004 J. Appl. Phys. 95 7707
7. Olzierski A, Nassiopoulou A G, Raptis I and Stoica T 2004 Nanotechnology 15 1695
8. Legrand B, Agache V, Nys J P, Senez V and Stievenard D 2000 Appl. Phys. Lett. 76 3271
9. Sutter P, Ernst W, Choi Y S and Sutter E 2006 Appl. Phys. Lett. 88 141924
10. Sutter P, Ernst W and Sutter E 2004 Appl. Phys. Lett. 85 3148
11. Sutter P, Mateeva-Sutter E and Vescan L 2001 Appl. Phys. Lett. 78 1736
12. Sutter E, Sutter P, Zahl P, Rugheimer P and Lagally M G 2003 Surf. Sci. 532-535 785
13. Sutter E, Sutter P and Bernard J 2004 Appl. Phys. Lett. 84 2262