SCOPUS 정보 검색 플랫폼

Volumn 26, Issue 2-3, 2006, Pages 360-363

Charging effects in Ge nanocrystals embedded in SiO2 matrix for non volatile memory applications

Author keywords

C V; I V charging; Memory; Nanocrystals

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HYSTERESIS; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; SILICA; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

C-V; I-V CHARGING; MEMORY; NANOCRYSTALS;

GERMANIUM;

EID: 32944471470 PISSN: 09284931 EISSN: None Source Type: Journal
DOI: 10.1016/j.msec.2005.10.039 Document Type: Conference Paper

Times cited : (4)

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