Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1532-1534

  Li, P W ^a   Liao, W M ^a   Kuo, David M T ^a   Lin, S W ^a   Chen, P S ^b   Lu, S C ^b   Tsai, M J ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; FERMI LEVEL; OSCILLATIONS; OXIDATION; QUANTUM THEORY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAPS; SELECTIVE OXIDATION; SINGLE-ELECTRON TRANSISTORS; THERMAL OXIDATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4944258274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1785870     Document Type: Article

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