Atomic-level simulations of epitaxial recrystallization and amorphous-to-crystalline transition in 4H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 10, 2006, Pages

  Gao, F ^a   Zhang, Y ^a   Posselt, M ^b   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33748686180     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.104108     Document Type: Article

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