Annealing simulations of nano-sized amorphous structures in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 282-287

  Gao, F ^a   Devanathan, R ^a   Zhang, Y ^a   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Amorphous layer; Annealing simulations; Defects; Silicon carbide

Indexed keywords

AMORPHOUS LAYER; ANNEALING SIMULATIONS; PERFECT CRYSTAL; SECOND-PHASE STABILITY;

ANNEALING; CARBIDES; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; MATHEMATICAL MODELS; NUCLEAR REACTORS; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS MATERIALS;

EID: 11344274110     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.057     Document Type: Conference Paper

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