Recrystallization process of phosphorus ion implanted 4H-SiC(112-0)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 627-629

  Satoh, M ^a   Hitomi, T ^a   Suzuki, T ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

Activation energy; Implantation; Impurity effect; Recrystallization; SiC

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); ION IMPLANTATION; PHOSPHORUS; RECRYSTALLIZATION (METALLURGY); TEMPERATURE DISTRIBUTION;

AMORPHOUS LAYER; IMPLANTATION; IMPURITY EFFECT; SIC;

SILICON CARBIDE;

EID: 28644431573     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.093     Document Type: Conference Paper

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