Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 473-475

  Ishimaru, Manabu ^a   Bae, In Tae ^a   Hirata, Akihiko ^a   Hirotsu, Yoshihiko ^a   Valdez, James A ^b   Sickafus, Kurt E ^b  

^a OSAKA UNIVERSITY   (Japan)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Amorphous structure; Atomic pair distribution function; Silicon carbide; Transmission electron microscopy

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; FUNCTIONS; ION BEAMS; IONS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS STRUCTURE; ATOMIC PAIR-DISTRIBUTION FUNCTION; FLUENCE; IMAGING PLATES;

SILICON CARBIDE;

EID: 28544448744     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.066     Document Type: Conference Paper

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