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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 186-194

Ion implantation of silicon carbide

(12) Hallen A a Janson, M S a Kuznetsov, A Yu a Aberg D a Linnarsson, M K a Svensson, B G a,b Persson, P O c Carlsson, F H C c Storasta, L c Bergman, J P c Sridhara, S G c Zhang, Y d

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b UNIVERSITY OF OSLO (Norway)

c LINKÖPING UNIVERSITY (Sweden)

d UPPSALA UNIVERSITY (Sweden)

Author keywords

Annealing; Damage; Dislocation loops; Dose rate; Point defects

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; POINT DEFECTS; RATE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING KINETICS;

SILICON CARBIDE;

EID: 0036135714 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00880-1 Document Type: Article

Times cited : (60)

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