Empirical potential approach for defect properties in 3C-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 191, Issue 1-4, 2002, Pages 504-508

  Gao, Fei ^a   Weber, William J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Computer simulation; Defect properties; Empirical potential; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; MOLECULAR DYNAMICS;

FORMATION ENERGIES;

SILICON CARBIDE;

EID: 0036574173     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00600-6     Document Type: Conference Paper

References (11)