A comparative study of the structure and energetics of elementary defects in 3C- and 4H-SiC

Journal of Physics Condensed Matter

Volumn 16, Issue 8, 2004, Pages 1307-1323

  Posselt, M ^a   Gao, F ^b   Weber, W J ^b   Belko, V ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ELEMENTARY DEFECTS; ENERGETICS;

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DATA ACQUISITION; HIGH TEMPERATURE EFFECTS; QUENCHING; SEMICONDUCTOR DOPING;

SILICON CARBIDE;

EID: 1642323582     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/8/015     Document Type: Article

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