Effects of the inversionlayer centroid on the performance of doublegate MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 141146-

  LöpezVillanueva, Juan A ^a   CartujoCassinello, Pedro ^a   Gâmiz, Francisco ^a   Banqueri, Jesus ^a   Raima, Alberto J ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Charge carrier density; Inversion layers; Mosfet's

Indexed keywords

EID: 33747126482     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (28)

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