Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 999-1004

  Gamiz F ^a   Lopez Villanueva J A ^a   Banqueri, J ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPOSITION EFFECTS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; MOSFET DEVICES; OXIDES; VOLTAGE MEASUREMENT;

ELECTRON MOBILITY; INTERFACE CHARGE CONCENTRATION; OXIDE CHARGE DISTRIBUTION PROFILE;

CHARGE CARRIERS;

EID: 0029307946     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381999     Document Type: Article

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