Dual-Gate Operation and Volume Inversion in n-Channel SOI MOSFET's

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 44-46

  Venkatesan, S ^a   Neudeck, Gerold W ^a   Pierret, Robert F ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY;

DUAL-GATE MOSFET OPERATION; N-CHANNEL SOI MOSFET; THIN-FILM SOI MOSFET; VOLUME INVERSION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026763758     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144946     Document Type: Article

References (1)

1. J.P. Colinge, “Thin-film SOI technology: The solution to many