Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1487-1493

  Hareland, Scott A ^a   Manassian, M ^a   Shih, Wei Kai ^a   Jallepalli, S ^a   Wang, Haihong ^a   Chindalore, Gowri L ^a   Tasch, Al F ^b   Maziar, Christine M ^b  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Accumulation layers; MOS; Mos devices; Quantum mechanical effects

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; QUANTUM THEORY; STABILITY;

ACCUMULATION LAYERS;

MOS DEVICES;

EID: 0032122840     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701479     Document Type: Article

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