Effect of the pore structure on the properties of nanoporous silsesquioxane thin film

Microporous and Mesoporous Materials

Volumn 94, Issue 1-3, 2006, Pages 113-121

  Lee, Kwang Hee ^a,b   Yim, Jin Heong ^a,b   Baklanov, Mikhail R ^b,c  

^a Kongju National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c IMEC   (Belgium)

Author keywords

Low k; Nanoporous; Pore structure; Silsesquioxane; Solvent diffusivity; Stress

Indexed keywords

DIFFUSION; PERMITTIVITY; PORE SIZE; POROUS MATERIALS; THERMAL STRESS; THIN FILMS;

LOW-K; NANOPOROUS; SILSESQUIOXANE; SOLVENT DIFFUSIVITY; STRESS;

NANOSTRUCTURED MATERIALS;

DIFFUSION; NANOSTRUCTURED MATERIALS; PERMITTIVITY; PORE SIZE; POROUS MATERIALS; THERMAL STRESS; THIN FILMS;

EID: 33746920840     PISSN: 13871811     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micromeso.2006.03.029     Document Type: Article

References (40)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, Gaithersburg, MD, 2003.
2. Kim H.C., Wilds J.B., Kreller C.R., Volksen W., Brock P.J., Lee V.Y., Magbitang T., Hedrick J.L., Hawker C.J., and Miller R.D. Adv. Mater. 14 (2002) 1637
3. Hedrick J.L., Miller R.D., Hawker C.J., Carter K.R., Volksen W., Yoon D.Y., and Trollsas M. Adv. Mater. 10 (1998) 1049
4. Nguyen C.V., Carter K.R., Hawker C.J., Hedrick J.L., Jaffe R.L., Miller R.D., Remenar J.F., Rhee H.W., Rice P.M., Toney M.F., Trollsas M., and Yoon D.Y. Chem. Mater. 11 (1999) 3080
5. Kohl A.T., Mimna R., Shick R., Rhodes L., Wang Z.L., and Kohl P.A. Electrochem. Solid-State Lett. 2 (1999) 77
6. deTheije F.J., Balkenendl A.R., Verheijen M.A., Baklanov M.R., Mogilnikov K.P., and Furukawa Y. J. Phys. Chem. B 107 (2003) 4280
7. Yang S., Mirau P.A., Pai C., Nalamasu O., Reichmanis E., Pai J.C., Obeng Y.S., Seputro J., Lin E.K., Lee H., Sun J., and Gidley D.W. Chem. Mater. 14 (2002) 369
8. Tsuda H., Kageyama S., Katayama S., Ohashi N., Matsubara Y., and Kobayashi N. Proc. IITC (2004) 27
9. Jacobs T., Brennan K., Carpio R., Mosig K., Lin J.-C., Cox H., Mlynko W., Fourcher J., Bennett J., Wolf J., Augur R., and Gillespie P. Proc. IITC (2002) 236
10. Furuya A., Soda E., Yoneda K., Yoshie T., Okamura H., Shimada M., Ohtsuka N., and Ogawa S. Proc. IITC (2004) 39
11. Y. Du, G. Wang, C. Merrill, P.S. Ho, Proc. Elec. Comp. Tech. Conf., 2002, 52nd, p. 859.
12. Zhao J.-H., Ryan T., and Ho P.S. J. Appl. Phys. 88 (2000) 3029
13. Beseling W., Satta A., Schuhmacher J., Abell T., Sutcliffe V., Hoyas A.M., Beyer G., Gravesteijn D., and Maex K. Proc. IITC (2002) 288
14. Iacopi F., Baklanov M.R., Sleeckx E., Conard T., Bender H., Meynen H., and Maex K. J. Vac. Sci. Technol. 20 (2002) 109
15. Yim J.-H., Lyu Y.-Y., Jeong H.-D., Song S.A., Hwang I.-S., Hyeon-Lee J., Mah S.K., Chang S., Park J.-G., Hu Y.F., Sun J.N., and Gidley D.W. Adv. Funct. Mater. 13 (2003) 382
16. Yim J.-H., Seon J.-B., Jeong H.-D., Pu Y.S., Baklanov M.R., and Gidley D.W. Adv. Funct. Mater. 14 (2004) 277
17. Rouquerol J., Anvir D., Fairbridge C.W., Everett D.H., Haynes J.H., Pernicone N., Ramsay J.D.F., Sing K.S.W., and Unger K.K. Pure Appl. Chem. 66 (1994) 1739
18. Yim J.-H., Lyu Y.-Y., Jeong H.-D., Mah S.K., Hyeon-Lee J., Hahn J.-H., Kim G.S., Chang S., and Park J.-G. J. Appl. Polym. Sci. 90 (2003) 626
19. Lyu Y.-Y., Yim J.-H., Byun Y., Lee S.-Y., Jung I.-S., and Pu L.S. Eur. Polym. J. 40 (2004) 2505
20. Baklanov M.R., Mogilnikov K.P., Polovinkin V.G., and Dultsev F.N. Vac. Sci. Technol. B 18 3 (2000) 1385
21. Baklanov M.R., and Mogilnikov K.P. Microelectron. Eng. 64 (2002) 335
22. Gregg S.J., and Sing S.W. Adsorption, Surface Area and Porosity. second ed. (1982), Academic Press, New York
23. Kondoh E., Baklanov M.R., Lin E., Gidley D., and Nakashima A. Jpn. J. Appl. Phys. 40 (2001) L323
24. Grill A., Patel V., Rodbell K.P., Huang E., Baklanov M.R., Mogilnikov K.P., Toney M., and Kim H.-C. J. Appl. Phys. 94 5 (2003) 3427
25. Maex K., Baklanov M.R., Shamiryan D., Iacopi F., Brongersma S., and Yanovitskaya Z.Sh. J. Appl. Phys. 93 (2003) 8793
26. Gidley D.W., Frieze W.E., Dull T.L., Sun J., Yee A.F., Nguyen C.V., and Yoon D.Y. Appl. Phys. Lett. 76 (2000) 1282
27. Gidley D.W., Frieze W.E., Yee A.F., Dull T.L., Ho H.-M., and Ryan E.T. Phys. Rev. B, Rapid Commun. 60 8 (1999) R5157
28. Dull T.L., Frieze W.E., Gidley D.W., Sun J.N., and Yee A.F. J. Phys. Chem. B 105 (2001) 4657
29. Oliver W.C., and Pharr G.M. J. Mater. Res. 7 (1992) 1564
30. Zhao J.-H., Qi W.-J., and Ho P.S. Microelectron. Reliab. 42 (2002) 27
31. Nomura H., Eguchi M., and Asano M. J. Appl. Phys. 70 (1991) 7085
32. Yim J.-H., Baklanov M.R., Gidley D.W., Jeong H.D., and Pu Y.S. J. Phys. Chem. B 108 (2004) 8953
33. Mogilnikov K.P., Baklanov M.R., Shamiryan D., and Petkov M.P. Jpn. J. Appl. Phys. 43 (2004) 247
34. Ravikovitch P.I., and Neimark A.V. Langmuir 18 (2002) 1550
35. Baklanov M.R., Mogilnikov K.P., and Yim J.-H. Mater. Res. Soc. Symp. Proc. 812 (2004) F5.4.1
36. Shamiryan D., and Maex K. Mater. Res. Soc. Symp. Proc. 766 (2003) E 9.11.1
37. Petkov M.P., Weber M.H., Lynn K.G., and Rodbell K.P. Appl. Phys. Lett. 79 (2001) 3884
38. Wang C.L., Weber M.H., Lynn K.G., and Rodbell K.P. Appl. Phys. Lett. 81 (2002) 4413
39. Padovani A.M., Riester L., Rhodes L., Allen S.A.B., and Kohl P.A. J. Electrochem. Soc. 149 (2002) F171
40. Yang H., Coombs N., Dag O., Sokolov I., and Ozin G.A. J. Mater. Chem. 7 (1997) 1755