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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 109-115

Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers

(7) Iacopi, F a,b Baklanov, M R a Sleeckx, E a Conard, T a Bender, H a Meynen, H c Maex, K a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c Dow Corning SA Belgium (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; DEGRADATION; DIFFUSION; HYDROGEN INORGANIC COMPOUNDS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; SEMICONDUCTING FILMS; SILICA;

DIELECTRIC CAP LAYERS;

DIELECTRIC FILMS;

EID: 0036118847 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1428274 Document Type: Conference Paper

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.