Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Henriksen, E A ^a   Syed, S ^a,d   Ahmadian, Y ^a   Manfra, M J ^b   Baldwin, K W ^b   Sergent, A M ^b   Molnar, R J ^c   Stormer, H L ^a,b  

^a Howard Hughes Medical Institute   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c MIT LINCOLN LABORATORY   (United States)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONON SCATTERING; HYDRIDE VAPOR PHASE EPITAXY (HVPE); PIEZOELECTRIC PHONONS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ACOUSTIC WAVE SCATTERING; CARRIER CONCENTRATION; DEFORMATION; ELECTRON GAS; ELECTRON SCATTERING; GALLIUM NITRIDE; HETEROJUNCTIONS; HYDRIDES; PHONONS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPOR PHASE EPITAXY;

FIELD EFFECT TRANSISTORS;

EID: 24344467089     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954893     Document Type: Article

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