Modeling of charging damage during interlevel oxide deposition in high-density plasmas

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 154-160

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000423826     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368012     Document Type: Article

References (19)

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16. The substrate is "grounded" when its potential remains constant despite the current injection. This situation occurs when large "patches" of substrate are directly (or through a thin oxide) exposed to the plasma, e.g., at wafer edges, at scribe lines (separating dyes), or at open areas separating dense patterns.
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