Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 523-525

  Chen, Ming Jer ^a   Huang, Huan Tsung ^a   Chen, Jyh Huei ^a   Su, Chi Wen ^b   Hou, Chin Shan ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; MATHEMATICAL MODELS; STATISTICAL METHODS; ULTRATHIN FILMS;

TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); ULTRATHIN OXIDES;

MOSFET DEVICES;

EID: 0033349281     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791930     Document Type: Article

References (9)

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