Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1257-1261

  Niraula, M ^a   Yasuda, K ^a   Ohnishi, H ^a   Takahashi, H ^a   Eguchi, K ^a   Noda, K ^a   Agata, Y ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe epilayers; Metalorganic vapor phase epitaxy (MOVPE); Radiation detectors; Si substrates

Indexed keywords

EXCITONIC EMISSION; NUCLEAR RADIATION DETECTION; X-RAY DOUBLE-CRYSTAL;

ADHESION; ANNEALING; CADMIUM; IMAGING TECHNIQUES; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEAR RADIATION SPECTROSCOPY; PHOTOLUMINESCENCE; SUBSTRATES;

SEMICONDUCTING TELLURIUM;

EID: 33746255453     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0251-5     Document Type: Conference Paper

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