Hot wall epitaxy of high-quality CdTe/Si(1 1 1)

Journal of Crystal Growth

Volumn 256, Issue 1-2, 2003, Pages 20-26

  Lalev, Georgi M ^a   Wang, Jifeng ^a   Abe, Seishi ^b   Masumoto, Katashi ^b   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

A3. Hot wall epitaxy; B2. Semiconducting II VI materials

Indexed keywords

CADMIUM COMPOUNDS; HYDROGEN; INFRARED DETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS;

CRYSTAL GROWTH;

EID: 0038711425     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01317-4     Document Type: Article

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