Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 785-790

  Yasuda, K ^a   Tomita, Y ^a   Masuda, Y ^a   Ishiguro, T ^a   Kawauchi, Y ^a   Morishita, H ^a   Agata, Y ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe; Doping mechanism; Iodine doping; Metal organic vapor phase epitaxy (MOVPE); n+ CdTe layers

Indexed keywords

CARRIER CONCENTRATION; HIGH TEMPERATURE EFFECTS; IODINE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

HOT-WALL CONDITIONS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0036638657     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0236-y     Document Type: Article

References (10)