Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1353-1357

  Maruyama, K ^a   Nishino, H ^a   Okamoto, T ^a   Murakami, S ^a   Saito, T ^a   Nishijima, Y ^a   Uchikoshi, M ^b,c   Nagashima, M ^b   Wada, H ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b JAPAN DEFENSE AGENCY   (Japan)

^c Kumamoto Polytechnic College   (Japan)

Author keywords

Adsorption; Annealing; Antiphase; CdTe; HgCdTe; Metalorganic tellurium; Metalorganic vapor phase epitaxy (MOVPE); Si; Twinning

Indexed keywords

EID: 0000106202     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655032     Document Type: Article

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