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Applied Physics Letters

Volumn 71, Issue 13, 1997, Pages 1810-1812

High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

(5) Rujirawat, S a Almeida, L A a,c Chen, Y P a,d Sivananthan, S a Smith, David J b

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b ARIZONA STATE UNIVERSITY (United States)

c E OIR Measurements Inc (United States)

d EPIR TECHNOLOGIES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001709480 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119406 Document Type: Article

Times cited : (72)

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