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Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 566-573

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4” silicon substrates

(10) Varesi, J B a Bornfreund, R E a Childs, A C a Radford, W A a Maranowski, K D a Peterson, J M a Johnson, S M a Giegerich, L M a De Lyon, T J b Jensen, J E b

a RAYTHEON COMPANY (United States)

b HRL (United States)

Author keywords

Alternative substrate HgCdTe; Focal plane array (FPA); HgCdTe; HgCdTe Si; Large format FPA; Mid wave infrared radiation (MWIR); Molecular beam epitaxy (MBE)

Indexed keywords

CRYSTAL DEFECTS; HETEROJUNCTIONS; INFRARED RADIATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; RADIATION DETECTORS; SILICON WAFERS; SUBSTRATES;

FOCAL PLANE ARRAY; LARGE FORMAT FOCAL PLANE ARRAY; MERCURY CADMIUM TELLURIDE; MID WAVE INFRARED RADIATION;

MERCURY COMPOUNDS;

EID: 0035359561 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02665836 Document Type: Article

Times cited : (64)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.