Development of nuclear radiation detectors with energy discrimination capabilities based on thick CdTe layers grown by metalorganic vapor phase epitaxy

IEEE Transactions on Nuclear Science

Volumn 52, Issue 5 III, 2005, Pages 1951-1955

  Yasuda, K ^a,b   Niraula, M ^b   Kusama, H ^b   Yamamoto, Y ^b   Tominaga, M ^b   Takagi, K ^b   Agata, Y ^b   Suzuki, K ^c  

^a IEEE   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^c HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdTe; Energy resolution; Heterojunction diode; MOVPE; Radiation detector; Thick epitaxial layers

Indexed keywords

CDTE; ENERGY RESOLUTION; HETEROJUNCTION DIODE; THICK EPITAXIAL LAYERS;

CHARGE TRANSFER; CRYSTAL GROWTH; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY; RADIOISOTOPES; SEMICONDUCTING CADMIUM TELLURIDE;

RADIATION DETECTORS;

EID: 29144494199     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.856597     Document Type: Article

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