Growth of high quality CdTe on Si substrates by molecular beam epitaxy

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1402-1405

  Almeida, L A ^a   Chen, Y P ^a   Faurie, J P ^a   Sivananthan, S ^a   Smith, David J ^b   Tsen, S C Y ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

CdTe; Defects; Heteroepitaxy; HgCdTe; Molecular beam epitaxy; Si substrate

Indexed keywords

EID: 0000982131     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655041     Document Type: Article

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